поискавой системы для электроныых деталей |
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SI4823DY датащи(PDF) 3 Page - Vishay Siliconix |
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SI4823DY датащи(HTML) 3 Page - Vishay Siliconix |
3 / 12 page Document Number: 64715 S10-1051-Rev. C, 03-May-10 www.vishay.com 3 Vishay Siliconix Si4823DY Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Forward Voltage Drop VF IF = 1 A 0.46 0.50 V IF = 1 A, TJ = 125 °C 0.41 0.50 Maximum Reverse Leakage Current Irm VR = 30 V 0.025 0.1 mA VR = 30 V, TJ = 85 °C 0.6 6 VR = 30 V, TJ = 125 °C 5 25 Junction Capacitance CT VR = 15 V 35 pF Output Characteristics On-Resistance vs. Drain Current and Gate Voltage 0 3 6 9 12 15 01 2 3 45 VDS - Drain-to-Source Voltage (V) VGS =10 V thru 4 V VGS =2 V VGS =3 V ID - Drain Current (A) 0.04 0.08 0.12 0.16 0.20 0 3 6 9 12 15 VGS =2.5 V VGS =4.5 V Transfer Characteristics Capacitance 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = 25 °C TC = - 55 °C Crss 0 100 200 300 400 500 600 04 8 12 16 20 Ciss VDS - Drain-to-Source Voltage (V) Coss |
Аналогичный номер детали - SI4823DY |
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Аналогичное описание - SI4823DY |
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