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STB18NM60N датащи(PDF) 4 Page - STMicroelectronics |
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STB18NM60N датащи(HTML) 4 Page - STMicroelectronics |
4 / 18 page Electrical characteristics STB/F/I/P/W18NM60N 4/18 Doc ID 15868 Rev 3 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS= 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating,TJ=125 °C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±25 V; VDS=0 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID=6.5 A 0.260 0.285 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f =1 MHz, VGS = 0 - 1000 60 3 - pF pF pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. Output equivalent capacitance VDS = 0, to 480 V, VGS=0 - 225 - pF Rg Intrinsic resistance f=1 MHz open drain - 3.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 13 A VGS = 10 V (see Figure 18) - 35 6 20 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 13 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 20 22 50 40 - ns ns ns ns |
Аналогичный номер детали - STB18NM60N |
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Аналогичное описание - STB18NM60N |
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