STD9NM40N datasheet(5/18 Pages) STMICROELECTRONICS

номер детали	STD9NM40N

подробное описание детали	N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

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STD9NM40N, STP9NM40N

Electrical characteristics

Doc ID 023762 Rev 2

5/18

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 200 V, ID = 5.6 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16)

-

7

4.4

25

8.8

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

-

5.6

22.4

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 5.6 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.6 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 21)

-

187

1.3

14

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.6 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 21)

-

224

1.5

13

ns

µC

A

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