поискавой системы для электроныых деталей |
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TPD1E10B06 датащи(PDF) 2 Page - Texas Instruments |
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TPD1E10B06 датащи(HTML) 2 Page - Texas Instruments |
2 / 14 page TPD1E10B06 SLLSEB1B – FEBRUARY 2012 – REVISED OCTOBER 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS MIN MAX UNIT Operating temperature range -40 125 °C Storage temperature –65 155 °C IEC 61000-4-2 contact ESD > ±30 kV IEC 61000-4-2 air-gap ESD > ±30 kV IPP Peak pulse current (tp = 8/20 μs) 6 A PPP Peak pulse power (tp = 8/20 μs) 90 W ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION MIN TYP MAX UNIT VRWM Reverse stand-off voltage Pin 1 to 2 or Pin 2 to 1 5.5 V ILEAK Leakage current Pin 1 = 5 V, Pin 2 = 0 V 100 nA IPP = 1 A, tp = 8/20 μSec (1) 10 Clamp voltage with ESD strike on pin 1, pin 2 VClamp1,2 V grounded. IPP = 5 A, tp = 8/20 μSec (1) 14 IPP = 1 A, tp = 8/20 μSec (1) 8.5 Clamp voltage with ESD strike on pin 2, pin 1 VClamp2,1 V grounded. IPP = 5 A, tp = 8/20 μSec (1) 14 Pin 1 to Pin 2(2) 0.32 RDYN Dynamic resistance Ω Pin 2 to Pin 1(2) 0.38 CIO IO capacitance VIO = 2.5 V 12 pF VBR1,2 Break-down voltage, pin 1 to pin 2 IIO = 1 mA 6 V VBR2,1 Break-down voltage, pin 2 to pin 1 IIO = 1 mA 6 V (1) Non-repetitive current pulse 8/20 us exponentially decaying waveform according to IEC61000-4-5 (2) Extraction of RDYNAMIC using least squares fit of TLP characteristics between IPP = 10A and IPP = 20A. iang THERMAL INFORMATION TPD1E10B06 THERMAL METRIC(1) DPY UNITS 2 PINS θJA Junction-to-ambient thermal resistance 615.5 θJCtop Junction-to-case (top) thermal resistance 404.8 θJB Junction-to-board thermal resistance 493.3 °C/W ψJT Junction-to-top characterization parameter 127.7 ψJB Junction-to-board characterization parameter 493.3 P Junction-to-case (bottom) thermal resistance (2) 162 mW (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. (2) Max junction temperature: 125°C; power dissipation calculated at 25°C ambient temperature using JEDEC High K board Standard. Not to be used for steady state power dissipation in the breakdown region. 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPD1E10B06 |
Аналогичный номер детали - TPD1E10B06_14 |
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Аналогичное описание - TPD1E10B06_14 |
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