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STGB35N35LZ-1 датащи(PDF) 1 Page - STMicroelectronics |
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STGB35N35LZ-1 датащи(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. May 2013 DocID12253 Rev 6 1/18 STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, E AS 450 mJ Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Low threshold voltage • Low on-voltage drop • High voltage clamping feature • Logic level gate charge • ESD gate-emitter protection • Gate and gate-emitter integrated resistors Application • Automotive ignition Description This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. D²PAK I²PAK 1 3 TAB 1 2 3 TAB TO-220 1 2 3 TAB C (2 or TAB) E (3) G (1) RG RGE SC30180 Table 1. Device summary Order codes Marking Package Packaging STGB35N35LZ-1 GB35N35LZ I²PAK Tube STGB35N35LZT4 GB35N35LZ D²PAK Tape and reel STGP35N35LZ GP35N35LZ TO-220 Tube www.st.com |
Аналогичный номер детали - STGB35N35LZ-1 |
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Аналогичное описание - STGB35N35LZ-1 |
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