2SK3109-ZJ datasheet(1/8 Pages) NEC

номер детали	2SK3109-ZJ

подробное описание детали	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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©

1998, 2000

MOS FIELD EFFECT TRANSISTOR

2SK3109

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D13332EJ1V0DS00 (1st edition)

Date Published January 2000 NS CP (K)

Printed in Japan

DATA SHEET

The mark 5 shows major revised points.

DESCRIPTION

The 2SK3109 is N channel MOS FET device that

features a low on-state resistance and excellent

switching characteristics, and designed for high voltage

applications such as DC/DC converter.

FEATURES

• Gate voltage rating ±30 V

• Low on-state resistance

RDS(on) = 0.4

Ω MAX. (VGS = 10 V, ID = 5.0 A)

• Low input capacitance

Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)

• Avalanche capability rated

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to source voltage (VGS = 0 V)

VDSS

200

V

Gate to source voltage (VDS = 0 V)

VGSS

±30

V

Drain current (DC) (TC = 25 °C)

ID(DC)

±10

A

Drain current (pulse)

Note1

ID(pulse)

±30

A

Total power dissipation (TA = 25 °C)

PT1

1.5

W

Total power dissipation (TC = 25 °C)

PT2

50

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

−55 to +150

°C

Single avalanche current

Note2

IAS

10

A

Single avalanche energy

Note2

EAS

35

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Starting Tch = 25 °C, VDD = 100 V, RG = 25

Ω, VGS = 20 V→0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3109

TO-220AB

2SK3109-S

TO-262

2SK3109-ZJ

TO-263

Аналогичный номер детали - 2SK3109-ZJ

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	2SK3109-ZJ	400Kb / 2P	isc N-Channel MOSFET Transistor
Renesas Technology Corp	2SK3109-ZJ	409Kb / 10P	MOS FIELD EFFECT TRANSISTOR 2000

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