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LM3421Q0 датащи(PDF) 6 Page - Texas Instruments |
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LM3421Q0 датащи(HTML) 6 Page - Texas Instruments |
6 / 65 page LM3421, LM3421-Q1 LM3423, LM3423-Q1 SNVS574D – JULY 2008 – REVISED SEPTEMBER 2011 www.ti.com Electrical Characteristics (1) (continued) Specifications in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating Temperature Range ( TJ = −40°C to +150°C for LM3421Q0/LM3423Q0, TJ = −40°C to +125°C for all others). Specifications that differ between the two operating ranges will be identified in the Temp Range column as Q0 for TJ = −40°C to +150°C and as Q1 for TJ = −40°C to +125°C. If no temperature range is indicated then the specification holds for both Q1 and Q0. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = +25°C, and are provided for reference purposes only. Unless otherwise stated the following condition applies: VIN = +14V. Temp Symbol Parameter Conditions Min(2) Typ(3) Max(2) Units Range ERROR AMPLIFIER VREF CSH Reference Voltage With Respect to AGND 1.210 1.235 1.260 V Error Amplifier Input Bias -0.6 0 0.6 Current µA COMP Sink / Source Current Q1 35 22 30 Q0 36 Transconductance 100 µA/V Linear Input Range (4) ±125 mV Transconductance Bandwidth -6dB Unloaded Response (4) 0.5 1.0 MHz OFF TIMER Minimum Off-time RCT = 1V through Q1 75 35 ns 1 k Ω Q0 90 RRCT RCT Reset Pull-down Q1 120 36 Ω Resistance Q0 125 VRCT VIN/25 Reference Voltage VIN = 14V Q1 585 540 565 mV Q0 590 f Continuous Conduction 2.2 nF > CT > 470 pF 25/(CTRT) Hz Switching Frequency PWM COMPARATOR COMP to PWM Offset 700 800 900 mV CURRENT LIMIT (IS) ILIM Current Limit Threshold 215 245 275 mV ILIM Delay to Output Q1 75 35 Q0 90 ns Leading Edge Blanking Time 115 210 325 HIGH SIDE TRANSCONDUCTANCE AMPLIFIER Input Bias Current 11.5 µA Transconductance 20 119 mA/V Input Offset Current -1.5 0 1.5 µA Input Offset Voltage -7 0 7 mV Transconductance Bandwidth ICSH = 100 µA 250 500 kHz (4) GATE DRIVER (GATE) RSRC(GATE) GATE Sourcing Resistance GATE = High 2.0 6.0 Ω RSNK(GATE) GATE Sinking Resistance GATE = Low 1.3 4.5 DIM DRIVER (DIM, DDRV) nDIMVTH nDIM / UVLO Threshold 1.185 1.240 1.285 V nDIMHYS nDIM Hysteresis Current Q1 25 20 23 µA Q0 26 RSRC(DDRV) DDRV Sourcing Resistance DDRV = High 13.5 30.0 Ω RSNK(DDRV) DDRV Sinking Resistance DDRV = Low 3.5 10.0 (4) These electrical parameters are specified by design, and are not verified by test. 6 Submit Documentation Feedback Copyright © 2008–2011, Texas Instruments Incorporated Product Folder Links: LM3421 LM3421-Q1 LM3423 LM3423-Q1 |
Аналогичный номер детали - LM3421Q0 |
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Аналогичное описание - LM3421Q0 |
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