Data Sheet D13992EJ1V0DS00

7

2SK3304

PACKAGE DRAWING (Unit : mm)

TO-3P (MP-88)

EQUIVALENT CIRCUIT

Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

15.7 MAX.

3.2

±0.2

4.7 MAX.

1.5 TYP.

2.8

±0.1

1.0

±0.2

0.6

±0.1

2.2

±0.2

5.45 TYP.

5.45 TYP.

1: Gate

2: Drain

3: Source

4: Fin (Drain)

1

23

4

Source

Body

Diode

Gate

Drain