поискавой системы для электроныых деталей |
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2N3418S датащи(PDF) 1 Page - Microsemi Corporation |
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2N3418S датащи(HTML) 1 Page - Microsemi Corporation |
1 / 6 page T4-LDS-0192-1, Rev. 1 (111684) ©2011 Microsemi Corporation Page 1 of 6 2N3418S thru 2N3421S Available on commercial versions NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Qualified Levels: JAN, JANTX and JANTXV DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. TO-39 (TO-205AD) Package Also available in: TO-5 package (leaded) 2N3418 – 2N3421 U4 package (surface mount) 2N3418U4 – 2N3421U4 Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3418 through 2N3421 series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393. • RoHS compliant versions available (commercial grade only). • V CE(sat) = 0.25 V @ Ic = 1 A. • Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA. • Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -10 0 mA. APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. MAXIMUM RATINGS MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Parameters / Test Conditions Symbol 2N3418S 2N3420S 2N3419S 2N3421S Unit Collector-Emitter Voltage V CEO 60 80 V Collector-Base Voltage V CBO 85 125 V Emitter-Base Voltage V EBO 8 V Collector Current tp <= 1 ms, duty cycle <= 50% IC 3 5 A Total Power Dissipation @ TA = +25 °C (1) @ TC = +100 °C (2) P D 1 5 W Operating & Storage Junction Temperature Range TJ , Tstg -65 to +200 °C Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C. 2. Derate linearly 150 mW/°C for TC > +100 °C. |
Аналогичный номер детали - 2N3418S |
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Аналогичное описание - 2N3418S |
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