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2N3418S датащи(PDF) 1 Page - Microsemi Corporation

номер детали 2N3418S
подробное описание детали  NPN MEDIUM POWER SILICON TRANSISTOR
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3418S датащи(HTML) 1 Page - Microsemi Corporation

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T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
Page 1 of 6
2N3418S thru 2N3421S
Available on
commercial
versions
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
Qualified Levels:
JAN, JANTX and
JANTXV
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-5 and low profile U4 packages. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(leaded)
2N3418 – 2N3421
U4 package
(surface mount)
2N3418U4 – 2N3421U4
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N3418 through 2N3421 series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/393.
RoHS compliant versions available (commercial grade only).
V CE(sat) = 0.25 V @ Ic = 1 A.
Rise time tr = 0.22 µs max @ IC = 1.0 A, IB1 = 100 mA.
Fall time tf = 0.20 µs max @ IC = 1.0 A, IB2 = -10 0 mA.
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
2N3418S
2N3420S
2N3419S
2N3421S
Unit
Collector-Emitter Voltage
V CEO
60
80
V
Collector-Base Voltage
V CBO
85
125
V
Emitter-Base Voltage
V EBO
8
V
Collector Current
tp <= 1 ms, duty cycle <= 50%
IC
3
5
A
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +100 °C
(2)
P D
1
5
W
Operating & Storage Junction Temperature Range
TJ , Tstg
-65 to +200
°C
Notes: 1. Derate linearly 5.72 mW/°C for TA > +25 °C.
2. Derate linearly 150 mW/°C for TC > +100 °C.


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