поискавой системы для электроныых деталей |
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3SK134B датащи(PDF) 1 Page - NEC |
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3SK134B датащи(HTML) 1 Page - NEC |
1 / 5 page © 1993 DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B FEATURES • High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz) • Suitable for use as RF amplifier in UHF TV tuner. • Automatically Mounting : Embossed Type Taping • Surface Mount Package : 4 Pins Mini Mold (EIAJ: SC-61) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSX 18 V Gate1 to Source Voltage VG1S ±8 (±10)*1 V Gate2 to Source Voltage VG2S ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D 18 V Drain Current ID 25 mA Total Power Dissipation PD 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg –55 to +125 °C *1 : RL ≥ 10 kΩ PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage fields. RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD PACKAGE DIMENSIONS (Unit : mm) PIN CONNECTIONS 1. 2. 3. 4. Source Drain Gate2 Gate1 2.8–0.3 +0.2 1.5–0.1 +0.2 5 o 5 o 5 o 5 o Document No. P10566EJ2V0DS00 (2nd edition) (Previous No. TD-2398) Date Published August 1995 P Printed in Japan |
Аналогичный номер детали - 3SK134B |
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Аналогичное описание - 3SK134B |
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