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STU2LN60K3 датащи(PDF) 5 Page - STMicroelectronics

номер детали STU2LN60K3
подробное описание детали  N-channel 600 V, 4typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STU2LN60K3 датащи(HTML) 5 Page - STMicroelectronics

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STD2LN60K3, STF2LN60K3, STU2LN60K3
Electrical characteristics
Doc ID 023500 Rev 1
5/20
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID =1 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
-
10
8.5
23.5
21
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
2
8
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 2 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)
-
200
800
8
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
230
950
8.5
ns
nC
A
Table 9.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
BVGSO
(1)
1.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown
voltage
Igs= ± 1 mA (open drain)
30
-
V


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