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FGB20N6S2D датащи(PDF) 1 Page - Fairchild Semiconductor |
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FGB20N6S2D датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2002 Fairchild Semiconductor Corporation July 2002 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 FGH20N6S2D / FGP20N6S2D / FGB20N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction (PFC) circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits IGBT (co-pack) formerly Developmental Type TA49332 (Diode formerly Developmental Type TA49469) Features • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ • Low Conduction Loss • Low Eon • Soft Recovery Diode Device Maximum Ratings T C= 25°C unless otherwise noted Symbol Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage 600 V IC25 Collector Current Continuous, TC = 25°C 28 A IC110 Collector Current Continuous, TC = 110°C 13 A ICM Collector Current Pulsed (Note 1) 40 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 35A at 600V A EAS Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 mJ PD Power Dissipation Total TC = 25°C 125 W Power Dissipation Derating TC > 25°C 1.0 W/°C TJ Operating Junction Temperature Range -55 to 150 °C TSTG Storage Junction Temperature Range -55 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Package TO-263AB TO-220AB E C G E G TO-247 E C G Symbol COLLECTOR (FLANGE) C E G |
Аналогичный номер детали - FGB20N6S2D |
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Аналогичное описание - FGB20N6S2D |
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