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ST2303SRG датащи(PDF) 1 Page - Stanson Technology |
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ST2303SRG датащи(HTML) 1 Page - Stanson Technology |
1 / 6 page ST2303SRG P Channel Enhancement Mode MOSFET -2.6A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2303SRG 2005. Rev.1 DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 1.Gate 2.Source 3.Drain PART MARKING SOT-23 Y: Year Code A: Process Code FEATURE -30V/-2.6A, RDS(ON) = 95m-ohm (Typ.) @VGS = -10V -30V/-2.0A, RDS(ON) = 125m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 1 2 D G S 3 1 2 S03YA |
Аналогичный номер детали - ST2303SRG |
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Аналогичное описание - ST2303SRG |
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