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STC6614 датащи(PDF) 1 Page - Stanson Technology |
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STC6614 датащи(HTML) 1 Page - Stanson Technology |
1 / 8 page STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC6614 2010. V1 DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING Y∶Year A∶Product Code Q︰Process Code FEATURE N-Channel 60V/7.0A, RDS(ON) = 35m (Typ.) @VGS = 10V 60V/4.0A, RDS(ON) = 40m @VGS = 4.5V P-Channel -60V/-5.0A, RDS(ON) = 60m (Typ.) @VGS = -10V -60V/-3.0A, RDS(ON)= 80m @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package |
Аналогичный номер детали - STC6614 |
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Аналогичное описание - STC6614 |
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