поискавой системы для электроныых деталей |
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2SK3215 датащи(PDF) 2 Page - Hitachi Semiconductor |
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2SK3215 датащи(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SK3215 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 200 V Gate to source voltage V GSS ±20 V Drain current I D 8A Drain peak current I D(pulse) Note1 32 A Body-drain diode reverse drain current I DR 8A Avalanche current I AP Note3 8A Avalanche energy E AR Note3 4.2 mJ Channel dissipation Pch Note2 40 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 200 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 200 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.0 — 2.5 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) — 0.35 0.40 Ω I D =4A, VGS = 10V Note4 resistance R DS(on) — 0.40 0.55 Ω I D =4A, VGS = 4V Note4 Forward transfer admittance |y fs| 4 6.5 — S I D =4A, VDS = 10V Note4 Input capacitance Ciss — 410 — pF V DS = 10V Output capacitance Coss — 150 — pF V GS = 0 Reverse transfer capacitance Crss — 90 — pF f = 1MHz Turn-on delay time t d(on) — 10 — ns I D =4A, VGS = 10V Rise time t r — 45 — ns R L = 7.5Ω Turn-off delay time t d(off) — 100 — ns Fall time t f —60 — ns Body–drain diode forward voltage V DF — 0.95 — V I F = 8A, VGS = 0 Body–drain diode reverse recovery time t rr — 100 — ns I F = 8A, VGS = 0 diF/ dt =50A/ µs Note: 4. Pulse test |
Аналогичный номер детали - 2SK3215 |
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Аналогичное описание - 2SK3215 |
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