© 2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC337 / BC338 Rev. 1.1.0

October 2014

BC337 / BC338

NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for AF-Driver Stages and Low-Power Output Stages

• Complement to BC327 / BC328

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Part Number

Top Mark

Package

Packing Method

BC33716BU

BC33716

TO-92 3L

Bulk

BC33716TA

BC33716

TO-92 3L

Ammo

BC33716TFR

BC33716

TO-92 3L

Tape and Reel

BC33725BU

BC33725

TO-92 3L

Bulk

BC33725TA

BC33725

TO-92 3L

Ammo

BC33725TAR

BC33725

TO-92 3L

Ammo

BC33725TF

BC33725

TO-92 3L

Tape and Reel

BC33725TFR

BC33725

TO-92 3L

Tape and Reel

BC33740BU

BC33740

TO-92 3L

Bulk

BC33740TA

BC33740

TO-92 3L

Ammo

BC33825TA

BC33825

TO-92 3L

Ammo

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

BC337

50

V

BC338

30

Collector-Emitter Voltage

BC337

45

V

BC338

25

Emitter-Base Voltage

5

V

Collector Current (DC)

800

mA

Junction Temperature

150

°C

Storage Temperature

-55 to 150

°C

1. Collector 2. Base 3. Emitter

TO-92

1