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STFI28N60M2 датащи(PDF) 3 Page - STMicroelectronics

номер детали STFI28N60M2
подробное описание детали  N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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DocID025255 Rev 2
3/14
STF28N60M2, STFI28N60M2
Electrical ratings
14
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
22
(1)
1.
Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C
14
(1)
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
88
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
30
W
dv/dt
(3)
3.
I
SD
≤ 22 A, di/dt ≤ 400 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt
(4)
4.
V
DS
≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
C
= 25 °C)
2500
V
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case max
4.17
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T
jmax
)
4A
E
AS
Single pulse avalanche energy (starting T
j
=25°C,
I
D
= I
AR
; V
DD
=50)
2200
mJ


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