2N1890 datasheet(1/3 Pages) MICROSEMI

номер детали	2N1890

подробное описание детали	NPN LOW POWER SILICON TRANSISTOR

Download	3 Pages

Scroll/Zoom	100%

производитель	MICROSEMI [Microsemi Corporation]

домашняя страница	http://www.microsemi.com

Logo

1 / 3 page

TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/225

Devices

Qualified Level

2N1711

2N1890

JAN

JANTX

MAXIMUM RATINGS

Ratings

Symbol

2N1711

2N1890

Unit

Collector-Base Voltage

VCBO

75

100

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Collector Current

IC

500

mAdc

Total Power Dissipation

@ TA = +25

0C (1)

@ TC = +25

0C (2)

PT

0.8

3.0

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Impedance

ZθJX

58

0C/W

1) Derate linearly 4.57 mW/

0C for TA > 250C

2) Derate linearly 17.2 mW/

0C for TC > 250C

TO-5*

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (TA = 25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

IC = 100 µAdc

2N1711, S

2N1890, S

V(BR)CBO

75

100

Vdc

Collector-Emitter Breakdown Voltage

RBE = 10 Ω, IC = 100 mAdc

2N1711, S

2N1890, S

V(BR)CER

50

80

Vdc

Collector-Emitter Breakdown Voltage

IC = 30 mAdc

2N1711, S

2N1890, S

V(BR)CEO

30

60

Vdc

Emitter-Base Breakdown Voltage

IE = 100 µAdc

V(BR)EBO

7.0

Vdc

Collector-Base Cutoff Current

VCB = 60 Vdc

2N1711

VCB = 80 Vdc

2N1890

ICBO

10

ηAdc

Emitter-Base Cutoff Current

VEB = 5.0 Vdc

IEBO

5.0

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

Аналогичный номер детали - 2N1890

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	2N1890	54Kb / 1P	Small Signal Transistors
Microsemi Corporation	2N1890	59Kb / 3P	NPN LOW POWER SILICON TRANSISTOR
New Jersey Semi-Conduct...	2N1890	153Kb / 1P	Diode TP-39

More results

Аналогичное описание - 2N1890

производитель	номер детали	датащи	подробное описание детали
Microsemi Corporation	2N930	67Kb / 2P	NPN LOW POWER SILICON TRANSISTOR
Advanced Semiconductor	MRF8372	27Kb / 1P	NPN SILICON LOW POWER TRANSISTOR
Microsemi Corporation	JAN2N3440	312Kb / 6P	NPN LOW POWER SILICON TRANSISTOR
	JANTX2N918	186Kb / 4P	NPN LOW POWER SILICON TRANSISTOR
	2N2484UA	51Kb / 2P	NPN SILICON LOW POWER TRANSISTOR
	2N2432	56Kb / 2P	NPN SILICON LOW POWER TRANSISTOR
	2N2484	56Kb / 2P	NPN SILICON LOW POWER TRANSISTOR
	2N718A	59Kb / 2P	NPN LOW POWER SILICON TRANSISTOR
	JAN2N2484	51Kb / 2P	NPN SILICON LOW POWER TRANSISTOR
	JANS2N3440	312Kb / 6P	NPN LOW POWER SILICON TRANSISTOR
	2N3439	106Kb / 2P	NPN LOW POWER SILICON TRANSISTOR

More results

2N1890 датащи(PDF) 1 Page - Microsemi Corporation

2N1890 датащи(HTML) 1 Page - Microsemi Corporation

Аналогичный номер детали - 2N1890

Аналогичное описание - 2N1890

Html Pages

1 2 3

датащи скачать

ссылки URL