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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BF908WR_2015 датащи(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF908WR_2015 датащи(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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5 / 7 page  1995 Apr 25 5 Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR Fig.3 Transfer characteristics; typical values. VDS =8V. Tj =25 °C. handbook, halfpage 0 10 20 30 40 0 0.2 0.4 0.6 –0.2 –0.4 –0.6 3 V 2 V 1.5 V 1 V 0.5 V 0 V (mA) ID = 4 V VG2-S VG1-S (V) MRC281 Fig.4 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 0 10 20 30 04 8 12 0.2 V 0.1 V 0 V –0.2 V –0.3 V –0.1 V V (V) DS I D (mA) 16 V = G1-S 0.3 V MRC282 Fig.5 Forward transfer admittance as a function of drain current; typical values. VDS =8V. Tj =25 °C. 0 10 20 30 40 50 0 5 10 15 20 25 0.5 V 1 V 1.5 V 2 V 3 V 4 V VG2-S = 0 V Yfs (mS) ID (mA) MRC280 Fig.6 Forward transfer admittance as a function of junction temperature; typical values. 0 20 40 60 0 40 80 120 160 40 Yfs (mS) T j ( C) o MRC276 |
Аналогичный номер детали - BF908WR_2015 |
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Аналогичное описание - BF908WR_2015 |
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