поискавой системы для электроныых деталей |
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BF1203_2015 датащи(PDF) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1203_2015 датащи(HTML) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
9 / 20 page 2001 Apr 25 9 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1203 handbook, halfpage MGT588 102 10 1 10−1 10 102 103 f (MHz) yis (mS) bis gis Fig.15 Input admittance as a function of frequency; typical values. Amplifier a VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MGT589 103 102 10 1 10 102 103 f (MHz) −102 −10 −1 ϕrs (deg) −103 |yrs| ( µS) ϕrs |yrs| Fig.16 Reverse transfer admittance and phase as a function of frequency; typical values. Amplifier a VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MGT590 102 10 1 −102 −10 −1 10 102 103 f (MHz) |yfs| (mS) ϕfs (deg) ϕfs |yfs| Fig.17 Forward transfer admittance and phase as a function of frequency; typical values. Amplifier a VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. handbook, halfpage MGT591 10 1 10−1 10−2 10 102 103 f (MHz) yos (mS) bos gos Fig.18 Output admittance as a function of frequency; typical values. Amplifier a VDS = 5 V; VG2 =4V. ID = 15 mA; Tamb =25 °C. |
Аналогичный номер детали - BF1203_2015 |
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Аналогичное описание - BF1203_2015 |
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