Preliminary ESD50V12L

Low Capacitance TVS Diode Array

Publication Order Number: [ESD50V12L]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Ppk

Peak Pulse Power (tp

= 8/20μs)

500

W

IPP

Peak Pulse Current (tp = 8/20μs)

16

A

VFP

Peak Forward Voltage (IF = 1A, tp=8/20μs)

1.5

v

Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

TJ

Lead Soldering Temperature

Operating Temperature

Storage Temperature

260 (10sec)

°C

TL

-55 to +125

°C

TSTG

-55 to +150

°C

Electrical Characteristics (Tc=25°C unless otherwise noted)

Parameter

Conditions

Symbol

Value

Unit

Typical

Max

Reverse

Stand-Off Voltage

Reverse

Breakdown

Voltage

Reverse Leakage

Current

Clamping Voltage

VRWM

13.5

12

V

It = 1Ma

VBP

V

VRWM =12V, T=25°C

IR

1

μA

IPP = 5A, tp = 8/20μs

VC

24

V

Clamping Voltage

IPP = 16

A, tp = 8/20μs

VC

50

31

V

Junction

Capacitance

Between I/O pins and Ground VR=0V,f=1MHz

Cj

5

10

pF

Between I/O pins VR =0V,f=1MHz

3

pF