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FDS2672_F085 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS2672_F085 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©20 10 Fairchild Semiconductor Corporation FDS2672 _F085 Rev. A www.fairchildsemi.com 1 tm February 2010 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 200 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Note 1a) 3.9 A -Pulsed 50 EAS Single Pulse Avalanche Energy (Note 3) 37.5 mJ PD Power Dissipation (Note 1a) 2.5 W Power Dissipation (Note 1b) 1.0 TJ, TSTG Operating and Storage Temperature -55 to 150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 Device Marking Device Reel Size Tape Width Quantity FDS2672 FDS2672 _F085 13’’ 12mm 2500 units FDS2672 _F085 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70m Ω Features Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology for extremely low rDS(on) Qualified to AEC Q101 General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC-DC conversion Pin 1 SO-8 4 3 2 1 5 6 7 8 D D D D G S S S RoHS compliant |
Аналогичный номер детали - FDS2672_F085 |
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Аналогичное описание - FDS2672_F085 |
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