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FDS2672_F085 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS2672_F085
подробное описание детали  N-Channel UltraFET Trench MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS2672_F085 датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS2672
_F085 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
200
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
206
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 160V, VGS=0V
1
µA
VDS = 160V, VGS=0V TJ = 55°C
10
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
2.9
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-11
mV/°C
rDS(on)
Drain to Source On Resistance
VGS = 10V, ID = 3.9A
59
70
m
VGS = 6V, ID = 3.5A
63
80
VGS = 10V, ID = 3.9A, TJ = 125°C
124
148
gFS
Forward Transcondductance
VDS = 10V,ID = 3.9A
15
S
(Note 2)
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 100V, VGS = 0V,
f = 1MHz
1905
2535
pF
Coss
Output Capacitance
100
135
pF
Crss
Reverse Transfer Capacitance
30
45
pF
Rg
Gate Resistance
f = 1MHz
0.7
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 100V, ID = 3.9A
VGS = 10V, RGEN = 6Ω
22
35
ns
tr
Rise Time
10
20
ns
td(off)
Turn-Off Delay Time
35
56
ns
tf
Fall Time
10
20
ns
Qg(TOT)
Total Gate Charge at 10V
VDD =100V ID = 3.9A
33
46
nC
Qgs
Gate to Source Gate Charge
11
nC
Qgd
Gate to Drain “Miller”Charge
7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
VGS = 0V, IS = 3.9A
0.75
1.2
V
trr
Reverse Recovery Time
IF = 3.9A, di/dt = 100A/µs
67
101
ns
Qrr
Reverse Recovery Charge
IF = 3.9A, di/dt = 100A/µs
179
269
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 5A, VDD = 100V, VGS = 10V
Scale 1:1 on letter size paper
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a 1in2
pad of 2 oz copper
b) 125°C/W when mounted on a
minimum pad .


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