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BUK6507-55C датащи(PDF) 2 Page - NXP Semiconductors |
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BUK6507-55C датащи(HTML) 2 Page - NXP Semiconductors |
2 / 14 page BUK6507-55C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 12 October 2010 2 of 14 NXP Semiconductors BUK6507-55C N-channel TrenchMOS logic and standard level FET 2. Pinning information 3. Ordering information Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =100 A; Vsup ≤ 55 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped --128 mJ Dynamic characteristics QGD gate-drain charge ID =25A; VDS =44 V; VGS = 10 V; see Figure 13; see Figure 14 -19 - nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate SOT78A (TO-220AB) 2 D drain 3S source mb D mounting base; connected to drain 12 mb 3 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK6507-55C TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78A |
Аналогичный номер детали - BUK6507-55C |
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Аналогичное описание - BUK6507-55C |
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