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CA3081F датащи(PDF) 2 Page - Intersil Corporation |
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CA3081F датащи(HTML) 2 Page - Intersil Corporation |
2 / 6 page 2 Absolute Maximum Ratings TA =25oC Thermal Information Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . .16V Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage (VCIO, Note 1). . . . . . . . . . . . . . 20V Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Base Current (IB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . . 115 45 PDIP Package . . . . . . . . . . . . . . . . . . . 100 N/A SOIC Package . . . . . . . . . . . . . . . . . . . 190 N/A Maximum Power Dissipation (Any One Transistor) . . . . . . . 500mW Maximum Junction Temperature (Ceramic Package) . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3081 and CA3082 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor action. To avoid undesired coupling between transistors, the substrate terminal (5) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications For Equipment Design at TA = 25 oC PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-to-Base Breakdown Voltage V(BR)CBO IC = 500µA, IE = 0 20 60 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 500µA, IB = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 16 24 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IC = 500µA 5.0 6.9 - V DC Forward Current Transfer Ratio hFE VCE = 0.5V, IC = 30mA 30 68 - - VCE = 0.8V, IC = 50mA 40 70 - - Base-to-Emitter Saturation Voltage (Figure 4) VBESAT IC = 30mA, IB = 1mA - 0.87 1.2 V Collector-to-Emitter Saturation Voltage VCESAT CA3081, CA3082 IC = 30mA, IB = 1mA - 0.27 0.5 V CA3081 (Figure 5) IC = 50mA, IB = 5mA - 0.4 0.7 V CA3082 (Figure 5) IC = 50mA, IB = 5mA - 0.4 0.8 V Collector Cutoff Current ICEO VCE = 10V, IB = 0 - - 10 µA Collector Cutoff Current ICBO VCB = 10V, IE = 0 - - 1.0 µA Typical Read - Out Driver Applications FIGURE 1. SCHEMATIC DIAGRAM SHOWING ONE TRANSISTOR OF THE CA3081 DRIVING ONE SEGMENT OF AN INCANDESCENT DISPLAY FIGURE 2. SCHEMATIC DIAGRAM SHOWING ONE TRANSISTOR OF THE CA3082 DRIVING A LIGHT EMITTING DIODE (LED) FROM DECODER 1/7 CA3081 (COMMON EMITTER) V+ 1 SEGMENT OF INCANDESCENT DISPLAY (DR2000 SERIES OR EQUIVALENT) 1/7 CA3082 (COMMON COLLECTOR) V+ R (NOTE) LIGHT EMITTING DIODE (LED) 40736R NOTE: The Resistance for R is determined by the relationship: Where: VP = Input Pulse Voltage VF = Forward Voltage Drop Across the Diode R V P V BE V F LED () – – I LED () ------------------------------------------------------- = R 0 for V P V BE V F LED () + == VP 0V CA3081, CA3082 |
Аналогичный номер детали - CA3081F |
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Аналогичное описание - CA3081F |
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