поискавой системы для электроныых деталей |
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2SD1221 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1221 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage VEBO 7 Collector Current - Continuous IC 3 Base Current IB 0.5 Collector Power Dissipation Ta = 25℃ 1 Tc = 25℃ 20 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 60 Collector- emitter breakdown voltage VCEO Ic= 50 mA, IB= 0 60 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 7 Collector-base cut-off current ICBO VCB= 60 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 7V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=300mA 0.4 1 Base - emitter saturation voltage VBE(sat) IC=3 A, IB=300mA 1.2 Base - emitte voltage VBE VCE= 5V, IC= 500mA 0.7 1 hFE(1) VCE= 5V, IC= 500mA 60 300 hFE(2) VCE= 5V, IC= 3 A 20 Turn-on time ton 0.8 Storage time tstg 1.5 Fall time tf 0.8 Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 70 pF Transition frequency fT VCE= 5V, IC= 500mA 3 MHz See specified Test Circuit us DC current gain V uA V ■ Classification of hfe(1) Type 2SD1221-O 2SD1221-Y 2SD1221-G Range 60-120 100-200 150-300 |
Аналогичный номер детали - 2SD1221_15 |
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Аналогичное описание - 2SD1221_15 |
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