поискавой системы для электроныых деталей |
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2SA1182-Y датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1182-Y датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1182 ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -32 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 Base Current - Continuous IB -50 Collector Power Dissipation PC 150 mW Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 V ℃ mA ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe(1) Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA, IE=0 -40 Collector- emitter breakdown voltage VCEO Ic= -1 mA, IB=0 -32 Emitter - base breakdown voltage VEBO IE= -100μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.1 -0.25 Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 Base-emitter voltage VBE IC=-100 mA VCE=-1V, -0.8 -1 hFE(1) VCE= -1V, IC= -100mA 70 400 hFE(2) VCE=- 6V, IC= -400mA *1 25 Collector output capacitance Cob VCB= -6V, IE= 0,f=1MHz 13 pF Transition frequency fT VCE= -6V, IC= -20mA 200 MHz DC current gain V V uA *1: hFE (2) classification O: 25 (min), Y: 40 (min), GR: 70 (min) Type 2SA1182-O 2SA1182-Y 2SA1182-G Range 70-140 120-240 200-400 Marking ZO ZY ZG 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
Аналогичный номер детали - 2SA1182-Y |
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Аналогичное описание - 2SA1182-Y |
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