поискавой системы для электроныых деталей |
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2SC2982-B датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC2982-B датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Transistors NPN Transistors 2SC2982 ■ Features ● Low saturation voltage ● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complementary to 2SA1314 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 10 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Collector Current - Pulse (Note.1) Icp 4 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 1 mA, IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 10 mA,IB= 0 10 Emitter - base breakdown voltage VEBO IE= 1mA, IC= 0 6 Collector- Base cut-off current ICBO VCB= 30 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=50mA 0.2 0.5 Base - emitter saturation voltage VBE(sat) IC=2A, IB=50mA 1.2 Base - emitter voltage VBE VCE= 1V, IC= 2A 0.86 1.5 VCE= 1V, IC= 0.5A 140 600 VCE= 1V, IC= 2A 70 140 Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 27 pF Transition frequency fT VCE= 1V, IC= 0.5A 150 MHz DC current gain hFE V V uA ■ Classification of hfe(1) Type 2SC2982-A 2SC2982-B 2SC2982-C 2SC2982-D Range 140-240 200-330 300-450 420-600 Marking SA* SB* SC* SD* |
Аналогичный номер детали - 2SC2982-B |
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Аналогичное описание - 2SC2982-B |
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