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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7855-HF датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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IRF7855-HF датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 6 page  SMD Type www.kexin.com.cn 2 MOSFET N-Channel MOSFET IRF7855-HF ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 60 V VDS=60V, VGS=0V 20 VDS=60V, VGS=0V, TJ=125℃ 250 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=100μA 2 4 V Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=12A 15 mΩ Forward Transconductance gFS VDS=25V, ID=7.2A 14 S Input Capacitance Ciss 1560 Output Capacitance Coss 440 Reverse Transfer Capacitance Crss 120 Output Capacitance Coss VGS = 0V, VDS = 1V, ƒ = 1.0MHz 1910 Output Capacitance Coss VGS = 0V, VDS = 48V, ƒ = 1.0MHz 320 Effective Output Capacitance Coss eff VGS = 0V, VDS = 0 to 48V 520 Total Gate Charge Qg 26 39 Gate Source Charge Qgs 6.8 Gate Drain Charge Qgd 9.6 Turn-On DelayTime td(on) 8.7 Turn-On Rise Time tr 13 Turn-Off DelayTime td(off) 16 Turn-Off Fall Time tf 12 Body Diode Reverse Recovery Time trr IS= 7.2A, VGS=0, dI/dt= 100A/μs,TJ = 25℃ 33 50 Body Diode Reverse Recovery Charge Qrr IF= 7.2A, VDD=25V, dI/dt= 100A/μs,TJ = 25℃ 38 57 nC Maximum Body-Diode Continuous Current IS 2.3 Pulsed Source Current ISM 97 Diode Forward Voltage VSD IS= 7.2A, VGS=0, TJ = 25℃ 0.71 1.3 V A nC pF ns Zero Gate Voltage Drain Current IDSS μ A VGS=10V, VDS=30V, ID=7.2A,RG=6.2Ω VGS=0V, VDS=25V, f=1MHz VGS=10V, VDS=30V, ID=7.2A MOSFET symbol showing the integral reverse p-n junction diode. S D G ■ Marking 7855 KC**** F Marking |
Аналогичный номер детали - IRF7855-HF |
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Аналогичное описание - IRF7855-HF |
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