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SI4490DY датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI4490DY датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 4 page SMD Type www.kexin.com.cn 2 MOSFET N-Channel MOSFET SI4490DY (KI4490DY) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 200 V VDS=160V, VGS=0V 1 VDS=160V, VGS=0V, TJ=55℃ 5 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 2 V VGS=10V, ID=4A 65 80 VGS=6V, ID=4A 70 90 On State Drain Current ID(ON) VGS= 10 V, VDS ≥ 5V 40 A Forward Transconductance *1 gFS VDS=15V, ID=5A 19 S Gate Resistance *2 Rg 0.2 0.85 1.3 Ω Total Gate Charge Qg 34 42 Gate Source Charge Qgs 7.5 Gate Drain Charge Qgd 12 Turn-On DelayTime td(on) 14 20 Turn-On Rise Time tr 20 30 Turn-Off DelayTime td(off) 32 50 Turn-Off Fall Time tf 25 35 Body Diode Reverse Recovery Time trr IF= 2.8A, dI/dt= 100A/μs 70 100 Maximum Body-Diode Continuous Current IS 2.8 A Diode Forward Voltage *1 VSD IS=2.8A,VGS=0V 0.75 1.2 V nC ns Zero Gate Voltage Drain Current IDSS μ A mΩ VGS=10V, VDS=100V, RL=25Ω, RG=6Ω,ID=4A *2 RDS(On) Static Drain-Source On-Resistance *1 VGS=10V, VDS=100V, ID=4A *2 *1: Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. *2: Guaranteed by design, not subject to production testing. ■ Typical Characterisitics Output Characteristics 0 8 16 24 32 40 0 2 4 6 8 10 VGS = 10 V thru 6 V VDS - Drain-to-Source Voltage (V) 5 V 4 V Transfer Characteristics 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 TC = 125 °C 25 °C VGS - Gate-to-Source Voltage (V) - 55 °C |
Аналогичный номер детали - SI4490DY |
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Аналогичное описание - SI4490DY |
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