IRF430 datasheet(4/7 Pages) INTERSIL

номер детали	IRF430

подробное описание детали	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

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4

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE

ON RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

100

10

1

1000

1

10

100

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25

oC

TJ = MAX RATED

SINGLE PULSE

10

µs

100

µs

1ms

10ms

DC

100ms

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

0

300

6

4

3

0

2

1

200

VGS = 4.5V

5

80

µs PULSE TEST

VGS = 4V

VGS = 5V

VGS = 5.5V

VGS = 10V

5

4

3

0

2

24

6

8

010

VDS, DRAIN TO SOURCE VOLTAGE (V)

1

80

µs PULSE TEST

VGS = 4.5V

VGS = 5V

VGS = 5.5V

VGS = 10V

VGS = 4V

5

0

1234

05

VGS, GATE TO SOURCE VOLTAGE (V)

1

2

VDS > ID(ON) x rDS(ON) MAX

80

µs PULSE TEST

DUTY CYCLE

≤ 2%

125oC

25oC

67

3

4

-55oC

ID, DRAIN CURRENT (A)

10

20

025

4

3

1

2

VGS = 20V

VGS = 10V

515

2.2

1.4

0.6

060

-60

TJ, JUNCTION TEMPERATURE (

oC)

ID = 1.5A

1.8

1.0

0.2

-40

-20

20

40

80

100

140

120

VGS = 10V

IRF430

Аналогичный номер детали - IRF430

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	IRF430	211Kb / 5P	N-CHANNEL POWER MOSFETS
Seme LAB	IRF430	21Kb / 2P	N-CHANNEL POWER MOSFET
Fairchild Semiconductor	IRF430	141Kb / 6P	N-Channel Power MOSFETs, 4.5 A, 450V/500V
International Rectifier	IRF430	146Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
New Jersey Semi-Conduct...	IRF430	153Kb / 3P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

More results

Аналогичное описание - IRF430

производитель	номер детали	датащи	подробное описание детали
Intersil Corporation	IRF830	56Kb / 7P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
Harris Corporation	BUZ41A	45Kb / 5P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
Intersil Corporation	BUZ41A	41Kb / 5P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET October 1998
New Jersey Semi-Conduct...	IRF430	153Kb / 3P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
Intersil Corporation	BUZ60B	42Kb / 5P	4.5A, 400V, 1.500 Ohm, N-Channel Power MOSFET October 1998
Intersil Corporation	IRFF430	325Kb / 7P	2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET
First Components Intern...	IRF830	259Kb / 5P	4.5A 500V N CHANNEL POWER MOSFET
First Components Intern...	IRF830FP	405Kb / 5P	4.5A 500V N CHANNEL POWER MOSFET
Fairchild Semiconductor	2N6784	90Kb / 7P	2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET
Tak Cheong Electronics ...	TFF830	310Kb / 7P	N-Channel Power MOSFET 4.5A, 500V, 1.50廓

More results

IRF430 датащи(PDF) 4 Page - Intersil Corporation

IRF430 датащи(HTML) 4 Page - Intersil Corporation

Аналогичный номер детали - IRF430

Аналогичное описание - IRF430

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