4-216

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

-

-

14

A

Pulse Source to Drain Current

(Note 3)

-

-

56

A

Source to Drain Diode Voltage (Note 2)

-

-

1.8

V

Reverse Recovery Time

150

300

640

ns

Reverse Recovery Charge

1.6

3.4

7.2

µC

NOTES:

2. Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

G

D

S

0

50

100

150

0

0.2

0.4

0.6

0.8

1.0

1.2

6

3

0

25

50

75

100

125

12

15

150

9

10

1

1

0.001

0.01

NOTES:

0.1

0.02

0.2

0.5

0.01

0.05

SINGLE PULSE

0.1

IRF646