IRFF220 datasheet(2/7 Pages) INTERSIL

номер детали	IRFF220

подробное описание детали	3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET

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2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFF220

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

200

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

200

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

3.5

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

14

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

20

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.16

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

85

mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

200

-

V

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

-

4.0

V

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

25

µA

VDS = 0.8 x Rated BVDSS,VGS = 0V, TJ = 125

oC

-

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS >ID(ON) x rDS(ON)MAX,VGS = 10V (Figure 7)

3.5

-

A

Gate to Source Leakage Forward

IGSS

VGS = ±20V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 2.0A (Figures 8, 9)

-

0.5

0.800

Ω

Forward Transconductance (Note 2)

gfs

VDS >ID(ON) x rDS(ON)MAX,ID = 2.0A (Figure 12)

1.5

2.25

-

S

Turn-On Delay Time

td(ON)

VDD = 0.5 x Rated BVDSS, RG = 9.1Ω,

VGS = 10V, ID ≈ 3.5A (Figures 17, 18)

RL = 27.4Ω for VDSS = 100V,

RL = 20.3Ω for VDSS = 75V,

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-20

40

ns

Rise Time

tr

-30

60

ns

Turn-Off Delay Time

td(OFF)

-

50

100

ns

Fall Time

tf

-30

60

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 3.5A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge

is Essentially Independent of Operating

Temperature

-11

15

nC

Gate to Source Charge

Qgs

-

5.0

-

nC

Gate to Drain “Miller” Charge

Qgd

-

6.0

-

nC

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

-

450

-

pF

Output Capacitance

COSS

-

150

-

pF

Reverse Transfer Capacitance

CRSS

-40

-

pF

Internal Drain Inductance

LD

Measured from the

Drain Lead, 5mm (0.2in)

from Header to Center

of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

-

5.0

-

nH

Internal Source Inductance

LS

Measured from the

Source Lead, 5mm

(0.2in) from Header and

Source Bonding Pad

-15

-

nH

Junction to Case

RθJC

-

6.25

oC/W

Junction to Ambient

RθJA

Free Air Operation

-

175

oC/W

LD

LS

D

S

G

IRFF220

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