SI2307BDS-3 datasheet(1/5 Pages) KEXIN

номер детали	SI2307BDS-3

подробное описание детали	P-Channel Enhancement MOSFET

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MOSFET

P-Channel Enhancement MOSFET

SI2307BDS (KI2307BDS)

■

Features

●

VDS (V) =-30V

●

RDS(ON) ＜ 78mΩ (VGS =-10V)

●

RDS(ON) ＜ 130mΩ (VGS =-4.5V)

G

S

D

2

3

1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

-3.2

-2.5

-2.6

-2.0

Pulsed Drain Current *2

IDM

Power Dissipation *1

Ta = 25℃

1.25

0.75

Ta = 70℃

0.8

0.48

Thermal Resistance.Junction- to-Ambient *1

100

Thermal Resistance.Junction- to-Ambient *3

166

Junction Temperature

TJ

Storage Temperature Range

Tstg

150

-55 to 150

-12

PD

W

RthJA

-30

±

20

Continuous Drain Current (Tj=150℃) *1

ID

V

℃

/W

A

℃

*1 Pulse width limited by maximum junction temperature.

*2 Surface Mounted on FR4 board, t ≤ 5 s.

*3 Surface Mounted on FR4 board.

1. Gate

2. Source

3. Drain

0.4 +0.1

-0.1

2.9 +0.2

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.2

1

2

3

Unit: mm

SOT-23-3

0.15 +0.02

-0.02

Ta = 25℃

Ta = 70℃

Аналогичный номер детали - SI2307BDS-3

производитель	номер детали	датащи	подробное описание детали
Guangdong Kexin Industr...	SI2307BDS-HF	1Mb / 5P	P-Channel MOSFET
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Vishay Siliconix	SI2307BDS-T1-E3	199Kb / 9P	P-Channel 30-V (D-S) MOSFET Rev. C, 03-Mar-08
VBsemi Electronics Co.,...	SI2307BDS-T1-GE3	495Kb / 9P	P-Channel 30 V (D-S) MOSFET

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Аналогичное описание - SI2307BDS-3

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SI2307BDS-3 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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Аналогичный номер детали - SI2307BDS-3

Аналогичное описание - SI2307BDS-3

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