IRFPG40 datasheet(4/6 Pages) INTERSIL

номер детали	IRFPG40

подробное описание детали	4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET

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производитель	INTERSIL [Intersil Corporation]

домашняя страница	http://www.intersil.com/cda/home

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FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs. JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

ID, DRAIN CURRENT (A)

3

2

1

0

04

8

4

5

26

12

10

6

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VGS = 10V

1.3

1.0

0.8

-50

0

50

100

150

TJ, JUNCTION TEMPERATURE (

oC)

3.0

0

1.5

1.7

2.0

2.2

2.5

2.7

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

ID = 2.5A, VGS = 10V

1.0

0.9

-60

0

60

120

150

TJ, JUNCTION TEMPERATURE (

oC)

ID = 250µA

1.3

0

1.1

1.2

-40

-20

20

40

80

100

140

1000

500

1

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

3000

0

1500

2000

10

2500

CISS

COSS

CRSS

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

01

2

3

ID, DRAIN CURRENT (A)

2

0

45

4

6

8

150oC

25oC

6

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

VDS ≥ 70V

0.1

1

0.3

SOURCE TO DRAIN VOLTAGE (V)

0

100

10

0.6

0.9

1.2

1.5

25oC

150oC

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

IRFPG40

Аналогичный номер детали - IRFPG40

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFPG40	167Kb / 6P	Power MOSFET(Vdss=1000V, Rds(on)=3.5ohm, Id=4.3A)
Vishay Siliconix	IRFPG40	1Mb / 8P	Power MOSFET Rev. A, 21-Jul-08
Vishay Siliconix	IRFPG40	910Kb / 11P	Power MOSFET 01-Jan-2022
International Rectifier	IRFPG40PBF	866Kb / 8P	HEXFET POWER MOSFET ( VDSS = 1000V , RDS(on) = 3.5廓 , ID = 4.3A )
Vishay Siliconix	IRFPG40PBF	1Mb / 8P	Power MOSFET Rev. A, 21-Jul-08

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Аналогичное описание - IRFPG40

производитель	номер детали	датащи	подробное описание детали
Intersil Corporation	RFP4N100	45Kb / 6P	4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
New Jersey Semi-Conduct...	RFP4N100	101Kb / 2P	4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
Intersil Corporation	RFP2N20	40Kb / 5P	2A, 200V, 3.500 Ohm, N-Channel Power MOSFET
STMicroelectronics	STW5NB100	54Kb / 5P	N - CHANNEL 1000V - 4ohm - 4.3A - TO-247 PowerMESH MOSFET
Intersil Corporation	RFP2N20L	35Kb / 5P	2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
International Rectifier	IRFPG40	167Kb / 6P	Power MOSFET(Vdss=1000V, Rds(on)=3.5ohm, Id=4.3A)
DONGGUAN YOU FENG WEI E...	YFW2302C	1,017Kb / 6P	4.3A, 20V N-CHANNEL MOSFET
DONGGUAN YOU FENG WEI E...	YFW2300A	906Kb / 5P	4.3A, 20V N-CHANNEL MOSFET
STMicroelectronics	STY15NA100	44Kb / 4P	N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET
Unisonic Technologies	9N100	184Kb / 5P	9A, 1000V N-CHANNEL POWER MOSFET

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IRFPG40 датащи(PDF) 4 Page - Intersil Corporation

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Аналогичный номер детали - IRFPG40

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