поискавой системы для электроныых деталей |
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SI9435DY датащи(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI9435DY датащи(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd |
4 / 4 page SMD Type www.kexin.com.cn 4 MOSFET . ■ Typical Characterisitics 0 2 4 6 8 10 5 1 0 1 5 0 Qg, GATE CHARGE (nC) ID = -5.3A VDS = -5V -10V -15V 0 200 400 600 800 1000 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 100 s RDS(ON) LIMIT VGS = -10V SINGLE PULSE R JA = 125oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, TIME (sec) SINGLE PULSE R JA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) R JA(t) = r(t) + R JA R JA = 125 oC/W TJ - TA = P * R JA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. P-Channel MOSFET SI9435DY |
Аналогичный номер детали - SI9435DY |
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Аналогичное описание - SI9435DY |
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