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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLR2705 датащи(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRLR2705 датащи(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 10 page  IRLR/U2705 S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 17A, VGS = 0V trr Reverse Recovery Time ––– 76 110 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 190 290 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 28 110 A VDD = 25V, starting TJ = 25°C, L = 610µH RG = 25Ω, IAS = 16A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width ≤ 300µs; duty cycle ≤ 2%. This is applied for I-PAK, L S of D-PAK is measured between lead and center of die contact. Uses IRLZ34N data and test conditions. ISD ≤ 16A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.040 VGS = 10V, ID = 17A ––– ––– 0.051 W VGS = 5.0V, ID = 17A ––– ––– 0.065 VGS = 4.0V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– S VDS = 25V, ID = 16A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 25 ID = 16A Qgs Gate-to-Source Charge ––– ––– 5.2 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 28V tr Rise Time ––– 100 ––– ns ID = 16A td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.5Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 1.8Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 880 ––– VGS = 0V Coss Output Capacitance ––– 220 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 94 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS InternalSourceInductance ––– 7.5 ––– RDS(on) StaticDrain-to-SourceOn-Resistance LD InternalDrainInductance 4.5 IDSS Drain-to-SourceLeakageCurrent
Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A. 2014-8-25 2 www.kersemi.com |
Аналогичный номер детали - IRLR2705 |
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Аналогичное описание - IRLR2705 |
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