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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF1407 датащи(PDF) 2 Page - International Rectifier |
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IRF1407 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF1407 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.0078 Ω VGS = 10V, ID = 78A T VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 74 ––– ––– SVDS = 25V, ID = 78A ––– ––– 20 µA VDS = 75V, VGS = 0V ––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 160 250 ID = 78A Qgs Gate-to-Source Charge ––– 35 52 nC VDS = 60V Qgd Gate-to-Drain ("Miller") Charge ––– 54 81 VGS = 10V T td(on) Turn-On Delay Time ––– 11 ––– VDD = 38V tr Rise Time ––– 150 ––– ID = 78A td(off) Turn-Off Delay Time ––– 150 ––– RG = 2.5Ω tf Fall Time ––– 140 ––– VGS = 10V T Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 5600 ––– VGS = 0V Coss Output Capacitance ––– 890 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 190 ––– ƒ = 1.0KHz, See Fig. 5 Coss Output Capacitance ––– 5800 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz Coss Output Capacitance ––– 560 ––– VGS = 0V, VDS = 60V, ƒ = 1.0KHz Coss eff. Effective Output Capacitance U ––– 1100 ––– VGS = 0V, VDS = 0V to 60V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) Q ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V T trr Reverse Recovery Time ––– 110 170 ns TJ = 25°C, IF = 78A Qrr Reverse RecoveryCharge ––– 390 590 nC di/dt = 100A/µsT ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 130 V 520 A Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25°C, L = 0.13mH RG = 25Ω, IAS = 78A. (See Figure 12). S ISD ≤ 78A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C T Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: U Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . VCalculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. |
Аналогичный номер детали - IRF1407 |
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Аналогичное описание - IRF1407 |
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