IRLR7833 datasheet(7/11 Pages) KERSEMI

номер детали	IRLR7833

подробное описание детали	High Frequency Synchronous Buck Converters for Computer Processor Power

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Fig 15.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Fig 16. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

IRLR/U7833

2014-8-25

7

www.kersemi.com

Аналогичный номер детали - IRLR7833

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRLR7833	188Kb / 11P	Power MOSFET
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Аналогичное описание - IRLR7833

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IRLR7833 датащи(PDF) 7 Page - Kersemi Electronic Co., Ltd.

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Аналогичный номер детали - IRLR7833

Аналогичное описание - IRLR7833

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