Data Sheet D14472EJ4V0DS

7

2SK3385

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2

13

6.5±0.2

5.0±0.2

4

2.3

2.3

0.5±0.1

2.3±0.2

1.1±0.2

+0.2

+0.2

2) TO-252 (MP-3Z)

12 3

4

6.5 ±0.2

4.4 ±0.2

5.0 ±0.2

0.5 ±0.1

0.5 ±0.1

2.3 ±0.2

0.5 ±0.1

Note

Note

0.15 ±0.15

2.3 ±0.3

2.3 ±0.3

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

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