IRF3808 datasheet(7/9 Pages) IRF

номер детали	IRF3808

подробное описание детали	Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A??

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IRF3808

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7

Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7.

∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆

∆∆∆∆T/ ZthJC

Iav = 2∆

∆∆∆∆T/ [1.3·BV·Z

th]

EAS (AR) = PD (ave)·tav

1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

1

10

100

1000

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche

pulsewidth,

tav

assuming

∆ Tj = 25°C due to

avalanche losses

0.01

25

50

75

100

125

150

175

Starting T J , Junction Temperature (°C)

0

100

200

300

400

500

TOP

Single Pulse

BOTTOM 10% Duty Cycle

ID = 140A

Аналогичный номер детали - IRF3808

производитель	номер детали	датащи	подробное описание детали
Kersemi Electronic Co.,...	IRF3808	831Kb / 9P	Integrated Starter Alternator
Inchange Semiconductor ...	IRF3808	338Kb / 2P	N-Channel MOSFET Transistor
International Rectifier	IRF3808L	162Kb / 11P	AUTOMOTIVE MOSFET
Inchange Semiconductor ...	IRF3808L	300Kb / 2P	Isc N-Channel MOSFET Transistor
International Rectifier	IRF3808LPBF	264Kb / 12P	Advanced Process Technology

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Аналогичное описание - IRF3808

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRL3803	365Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??
	IRL2203S	173Kb / 9P	Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??
	IRL3803S	436Kb / 10P	Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??
	IRFR2407	129Kb / 10P	Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A??
	IRF1407S	159Kb / 11P	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??
	IRFP2907	115Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=4.5mohm, Id=209A??
	IRF1407	127Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??
	IRF1607	234Kb / 9P	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A??
	IRF1407SPBF	258Kb / 12P	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )
	IRFP2907PBF	207Kb / 10P	AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5m廓 , ID = 209A)

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