N0300P_15 datasheet(6/8 Pages) RENESAS

номер детали	N0300P

подробное описание детали	MOS FIELD EFFECT TRANSISTOR

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Data Sheet D19782EJ1V0DS

4

N0300P

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

0

-2

-4

-6

-8

-10

-12

-14

-16

-18

0

-0.4

-0.8

-1.2

-1.6

-2

Pulsed

VGS =

−4.5 V

−10 V

VDS - Drain to Source Voltage - V

-0.001

-0.01

-0.1

-1

-10

-100

0

-1-2-3

-4

VDS =

−10 V

Pulsed

TA = 125

°C

75

°C

25

°C

−25°C

VGS - Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

0

-0.5

-1

-1.5

-2

-2.5

-3

-50 -25

0

25 50 75 100 125 150 175

VDS =

−10 V

ID =

−1.0 mA

Tch - Channel Temperature -

°C

0.01

0.1

1

10

100

-0.001

-0.01

-0.1

-1

-10

-100

VDS =

−10 V

Pulsed

TA = -25

°C

25

°C

75

°C

125

°C

ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

0

20

40

60

80

100

120

140

160

180

200

-0.1

-1

-10

-100

Pulsed

VGS =

−4.5 V

−10 V

ID - Drain Current - A

0

20

40

60

80

100

120

140

160

180

200

0-4

-8

-12

-16

ID =

−2.0 A

Pulsed

VGS - Gate to Source Voltage - V

Аналогичный номер детали - N0300P_15

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	N0300P-T1B-AT	262Kb / 8P	MOS FIELD EFFECT TRANSISTOR 2009
VBsemi Electronics Co.,...	N0300P-T1B-AT	484Kb / 9P	P-Channel 30 V (D-S) MOSFET

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Аналогичный номер детали - N0300P_15

Аналогичное описание - N0300P_15

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