поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

IRF7807V датащи(PDF) 4 Page - International Rectifier

номер детали IRF7807V
подробное описание детали  N Channel Application Specific MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7807V датащи(HTML) 4 Page - International Rectifier

  IRF7807V Datasheet HTML 1Page - International Rectifier IRF7807V Datasheet HTML 2Page - International Rectifier IRF7807V Datasheet HTML 3Page - International Rectifier IRF7807V Datasheet HTML 4Page - International Rectifier IRF7807V Datasheet HTML 5Page - International Rectifier IRF7807V Datasheet HTML 6Page - International Rectifier IRF7807V Datasheet HTML 7Page - International Rectifier IRF7807V Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
IRF7807V
4
www.irf.com
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage of
this new technology platform is that the MOSFETs it
produces are suitable for both control FET and synchro-
nous FET applications. This has been demonstrated with
the 3.3V and 5V converters. (Fig 3 and Fig 4). In these
applications the same MOSFET IRF7807V was used for
both the control FET (Q1) and the synchronous FET
(Q2). This provides a highly effective cost/performance
solution.
Figure 3
Figure 4
Figure 2: Q
oss Characteristic
For the synchronous MOSFET Q2, R
ds(on) is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
oss and re-
verse recovery charge Q
rr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
in. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
gd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807V can be downloaded in
machine readable format at www.irf.com.
3.3V Supply : Q1=Q2= IRF7807V
5.0V Supply : Q1=Q2= IRF7807V
83
84
85
86
87
88
89
90
91
92
93
123
45
Load current (A)
Vin=24V
Vin=14V
Vin=10V
86
87
88
89
90
91
92
93
94
95
1
2
345
Load cu rren t (A)
Vin =24V
Vin =14V
Vin =10V


Аналогичный номер детали - IRF7807V

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF7807V IRF-IRF7807V Datasheet
112Kb / 8P
   N Channel Application Specific MOSFET
IRF7807VD1 IRF-IRF7807VD1 Datasheet
117Kb / 9P
   FETKY??MOSFET / SCHOTTKY DIODE
IRF7807VD1 IRF-IRF7807VD1 Datasheet
1Mb / 9P
   HEXFET Power MOSFET
IRF7807VD1 IRF-IRF7807VD1 Datasheet
135Kb / 9P
   Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode
IRF7807VD1PBF IRF-IRF7807VD1PBF Datasheet
1Mb / 9P
   HEXFET Power MOSFET
More results

Аналогичное описание - IRF7807V

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRF7807VPBF IRF-IRF7807VPBF_15 Datasheet
197Kb / 8P
   N Channel Application Specific MOSFET
IRLR8503TRR IRF-IRLR8503TRR Datasheet
247Kb / 9P
   N-Channel Application-Specific MOSFET
IRF7807VTRPBF IRF-IRF7807VTRPBF Datasheet
197Kb / 8P
   N Channel Application Specific MOSFET
IRF7807VTR IRF-IRF7807VTR Datasheet
112Kb / 8P
   N Channel Application Specific MOSFET
IRF7811AVTRPBF IRF-IRF7811AVTRPBF Datasheet
116Kb / 6P
   N-Channel Application-Specific MOSFETs
IRF7811AVPBF IRF-IRF7811AVPBF_15 Datasheet
116Kb / 6P
   N-Channel Application-Specific MOSFETs
IRF7805PBF IRF-IRF7805PBF_15 Datasheet
230Kb / 5P
   N Channel Application Specific MOSFETs
IRLR8103V IRF-IRLR8103V Datasheet
151Kb / 8P
   N-Channel Application-Specific MOSFETs
IRF7811WGPBF IRF-IRF7811WGPBF Datasheet
190Kb / 6P
   N-Channel Application-Specific MOSFETs
IRF7822TRPBF IRF-IRF7822TRPBF Datasheet
148Kb / 6P
   N-Channel Application-Specific MOSFETs
More results


Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com