IRF5210

Power MOSFET

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Parameter

Max.

Units

-40

-29

A

Pulsed Drain Current



-140

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

780

mJ

Avalanche Current



-21

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

-5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

–––

62

Thermal Resistance

TO-220AB

Description

S

D

G

2014-8-10

1

www.kersemi.com