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IRFB33N15D датащи(PDF) 1 Page - International Rectifier |
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IRFB33N15D датащи(HTML) 1 Page - International Rectifier |
1 / 11 page Notes through are on page 11 www.irf.com 1 6/29/00 IRFB33N15D IRFS33N15D IRFSL33N15D SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max ID 150V 0.056 Ω 33A Typical SMPS Topologies l Telecom 48V input Active Clamp Forward Converter PD- 93903 D2Pak IRFS33N15D TO-220AB IRFB33N15D TO-262 IRFSL33N15D Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 A IDM Pulsed Drain Current 130 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 170 Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 4.4 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings l High frequency DC-DC converters Benefits Applications l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current |
Аналогичный номер детали - IRFB33N15D |
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Аналогичное описание - IRFB33N15D |
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