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IRFR1205 датащит (Datasheet) 1 Page - International Rectifier

№ деталь IRFR1205
подробность  Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A⑤)
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
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IRFR/U1205
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 0.027Ω
ID = 44A…
Description
5/11/98
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
44
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
31
…
A
IDM
Pulsed Drain Current
‡
160
PD @TC = 25°C
Power Dissipation
107
W
Linear Derating Factor
0.71
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚‡
210
mJ
IAR
Avalanche Current
‡
25
A
EAR
Repetitive Avalanche Energy
‡
11
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.4
RθJA
Junction-to-Ambient (PCB mount) **
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
D -P A K
T O -252 A A
I-P A K
TO -25 1A A
l Ultra Low On-Resistance
l Surface Mount (IRFR1205)
l Straight Lead (IRFU1205)
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91318B
www.irf.com
1




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