поискавой системы для электроныых деталей |
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2SC3356 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SC3356 датащи(HTML) 2 Page - Renesas Technology Corp |
2 / 9 page 2SC3356 R09DS0021EJ0300 Rev.3.00 Page 2 of 7 Jun 28, 2011 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 – – 1.0 μA Emitter Cut-off Current IEBO VEB = 1.0 V, IC = 0 – – 1.0 μA DC Current Gain hFE Note 1 VCE = 10 V, IC = 20 mA 50 120 250 – RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA – 7 – GHz Insertion Power Gain ⏐S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz – 11.5 – dB Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 2.0 dB Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0, f = 1 MHz − 0.55 1.0 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank Q/YQ R/YR S/YS Marking R23 R24 R25 hFE Value 50 to 100 80 to 160 125 to 250 <R> |
Аналогичный номер детали - 2SC3356 |
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Аналогичное описание - 2SC3356 |
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