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2SJ529(L) датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SJ529(L)
подробное описание детали  Silicon P Channel MOS FET
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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2SJ529(L), 2SJ529(S)
Rev.3.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–10
A
Drain peak current
ID (pulse)
Note 1
–40
A
Body to drain diode reverse drain current
IDR
–10
A
Avalanche current
IAP
Note 3
–10
A
Avalanche energy
EAR
Note 3
8.5
mJ
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 µA, VDS = 0
Zero gate voltage drain current
IDSS
–10
µA
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
0.12
0.16
ID = –5 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
0.17
0.24
ID = –5 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
4.5
7.5
S
ID = –5 A, VDS = –10 V
Note 4
Input capacitance
Ciss
580
pF
Output capacitance
Coss
300
pF
Reverse transfer capacitance
Crss
85
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
10
ns
Rise time
tr
40
ns
Turn-off delay time
td (off)
85
ns
Fall time
tf
60
ns
VGS = –10 V
ID = –5 A
RL = 6
Body to drain diode forward voltage
VDF
–1.2
V
IF = –10 A, VGS = 0
Body to drain diode reverse recovery time
trr
60
ns
IF = –10 A, VGS = 0
diF/dt = 50 A/
µs
Note:
4. Pulse test


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