2SK3446_15 datasheet(5/9 Pages) RENESAS

номер детали	2SK3446

подробное описание детали	Silicon N Channel Power MOS FET Power Switching

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2SK3446

Rev.8.00 Sep 07, 2005 page 3 of 6

Main Characteristics

1.6

0

0.4

0.8

1.2

50

100

150

200

3

1

0.3

0.1

0.03

0.01

0.1

0.3

1

3

10

30

100

500

2.5

0

0.5

1.0

1.5

2.0

24

6

8

10

5

0

1

2

3

4

24

68

10

0.003

0.001

10

Ta = 25°C

VGS = 1.5 V

2 V

Tc = –25°C

25°C

75°C

2.5 V

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Operation in

this area is

limited by RDS(on)

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

VDS = 10 V

Pulse Test

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Pulse Test

0

1

2

24

6

8

10

0.1

1

10

0.3

3

10

2

5

1

0.5

0.2

0.1

3

ID = 1 A

0.5 A

0.2 A

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Pulse Test

Static Drain to Source on State Resistance

vs. Drain Current

Drain Current

ID (A)

10

µs

PW

=

10

ms

(1shot)

DC

Operation

(Tc

=

25°C)

VGS = 2.5 V

4 V

Pulse Test

1 ms

100

µs

3 V

4 V

Аналогичный номер детали - 2SK3446_15

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	2SK3446TZ-E	82Kb / 7P	Silicon N Channel Power MOS FET Power Switching
Renesas Technology Corp	2SK3446	82Kb / 7P	Silicon N Channel Power MOS FET Power Switching

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Аналогичное описание - 2SK3446_15

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Renesas Technology Corp	HAT2299WP	108Kb / 7P	Silicon N Channel Power MOS FET Power Switching
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	HAT2096H	104Kb / 9P	Silicon N Channel Power MOS FET Power Switching
	HAT2193WP	121Kb / 9P	Silicon N Channel Power MOS FET Power Switching
	HAT2201R	112Kb / 10P	Silicon N Channel Power MOS FET Power Switching
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2SK3446 датащи(PDF) 5 Page - Renesas Technology Corp

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Аналогичный номер детали - 2SK3446_15

Аналогичное описание - 2SK3446_15

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