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2SJ605 датащи(PDF) 3 Page - Renesas Technology Corp |
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2SJ605 датащи(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page © 2000 MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14650EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark ! ! ! ! shows major revised points. DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 20 m Ω MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 m Ω MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A) • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V Gate to Source Voltage (VDS = 0 V) VGSS m 20 V Drain Current (DC) (TC = 25°C) ID(DC) m 65 A Drain Current (pulse) Note1 ID(pulse) m 200 A Total Power Dissipation (TC = 25°C) PT 100 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS –45 A Single Avalanche Energy Note2 EAS 203 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 →0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SJ605 TO-220AB 2SJ605-S TO-262 2SJ605-ZJ TO-263 2SJ605-Z TO-220SMD Note Note TO-220SMD package is produced only in Japan. (TO-220AB) (TO-262) (TO-263, TO-220SMD) ! ! |
Аналогичный номер детали - 2SJ605_15 |
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Аналогичное описание - 2SJ605_15 |
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